The memristor invented by HP?

Question

I heard the HP invented a new transistor that can be applied on the Nano scale, but not follow the typical size/heat generated characteristics of a transistor. This sounds pretty ground breaking. Does anyone have more information on this?

Answer 1

Memristor theory was formulated and named by Leon Chua in a 1971 paper. Chua strongly believed that a fourth device existed to provide conceptual symmetry with the resistor, inductor, and capacitor. This symmetry follows from the description of basic passive circuit elements as defined by a relation between two of the four fundamental circuit variables, namely voltage, current, charge and flux[5]. A device linking charge and flux (themselves defined as time integrals of current and voltage), which would be the memristor, was still hypothetical at the time. He did acknowledge that other scientists had already used fixed nonlinear flux-charge relationships.[6] However, it would not be until thirty-seven years later, on April 30, 2008, that a team at HP Labs led by the scientist R. Stanley Williams would announce the discovery of a switching memristor. Based on a thin film of titanium dioxide, it has been presented as an approximately ideal device.[7][8][9] Being much simpler than currently popular MOSFET switches and also able to implement one bit of non-volatile memory in a single device, memristors may enable nanoscale computer technology.[10] Chua also speculates that they may be useful in the construction of artificial neural networks.[11]