Wat does a 2n 2222 transistor indicate?

Question

plz tel me all the details about tat transis.......

Answer 1

PHYSICAL DIMENSIONS

Absolute Maximum Ratings:

Symbol Vceo Vcbo Vebo Ic Tj, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Continuous Operating Junction & Storage Temperature Range Limit 50 75 6.0 800 -65 to +200 Unit Vdc Vdc Vdc mAdc °C

Packaging Options: W: Wafer (100% probed) U: Wafer (sample probed) D: Chip (Waffle Pack) B: Chip (Vial) V: Chip (Waffle Pack, 100% visually inspected) X: Other Metallization Options: Standard: Al Top Dash 1: Al Top / Au Backside (No Dash #) / TiPdAg Backside

Processing Options: Standard: Capable of JANTXV applications (No Suffix) Suffix C: Commercial Suffix S: Capable of S-Level equivalent applications ORDERING INFORMATION: PART #: 2N2222A_ _ - _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option

Sertech reserves the right to make changes to any product design, specification, or other information at any time without prior notice. Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98 MSC0949.PDF 1

Electrical Characteristics @ Tj = 25 ° C

Symbol Parameter Conditions Min Max Unit

OFF CHARACTERISTICS V(BR)CBO V(BR)EBO V(BR)CEO ICES ICBO1 IEBO Breakdown Voltage, Collector to Base Breakdown Voltage, Emitter to Base Breakdown Voltage, Collector to Emitter Collector to Emitter Cutoff Current Collector to Base Cutoff Current Emitter to Base Cutoff Current Bias Cond. D, IC=10uAdc Bias Cond. D, IE=10uAdc Bias Cond. D, IC= 10mAdc, pulsed Bias Cond. D, VCE=50Vdc Bias Cond. D, VCB=60Vdc Bias Cond. D, VEB= 4Vdc 75 6 50 Vdc Vdc Vdc 50 nAdc 10 nAdc 10 nAdc

ON CHARACTERISTICS hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Forward-Current Transfer Ratio Forward-Current Transfer Ratio Forward-Current Transfer Ratio Forward-Current Transfer Ratio Forward-Current Transfer Ratio Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter Saturation Voltage VCE=10Vdc, IC=0.1mAdc VCE=10Vdc, IC=1.0mAdc VCE=10Vdc, IC=10mAdc VCE=10Vdc, IC=150mAdc, pulsed VCE=10Vdc, IC=500mAdc, pulsed IC=150mAdc, IB=15mAdc, pulsed IC=500mAdc, IB=50mAdc, pulsed IC=150mAdc, IB=15mAdc, pulsed IC=500mAdc, IB=50mAdc, pulsed 50 75 100 100 30

325 300 0.3 1 1.2 2 Vdc Vdc Vdc Vdc

0.6

SMALL SIGNAL CHARACTERISTICS hfe /hfe/ Cobo Cibo Short Circuit Forward Current Xfer Ratio Magnitude of Short Circuit Forward Current Transfer Ratio Output Capacitance Input Capacitance VCE= 10Vdc,IC =1mAdc, f= 1kHz VCE= 20Vdc,IC =50mAdc, f=100MHz VCB= 10Vdc, IE =0, 100kHz< f <1MHz VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz 50 2.5 8 pF 25 pF

SWITCHING CHARACTERISTICS ton toff Saturated Turn-on Time Saturated Turn-off Time As defined in 19500/255 Figure 8 As defined in 19500/255 Figure 9 45 nS 300 nS

Answer 2

That particular number, 2222, turned out to be one of the most popular swtiching transistors because of its characteristics (given above by the other answerer).  

It was serendipitous that the number 2222 (the next number in series after 2221, etc.) turned out to be designed with such good characteristics that made it so popular over the past 4 decades.  

Fast enough for most general purpose switching applications, with the right amount of current handling ability, a relatively high Beta, and enough power handling capacity, the 2N2222 is by far the most popular switching transistor, ever made.

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Answer 3

Man, one of the most popular components out there type it into google it reallllly isn't that difficult.  And while you into the whole typing thing learn how to spell.